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PD - 93792D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) IRHM54064 IRHM58064 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.012 0.012 0.012 0.013 ID 35A* 35A* 35A* 35A* IRHM57064 60V, N-CHANNEL 5 TECHNOLOGY TO-254AA International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 35* 35* 140 208 1.67 20 1090 35 20.8 4.8 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 in. (1.6 mm from case for10s ) 9.3 (Typical ) g 07/19/04 IRHM57064 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 -- -- 2.0 42 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.063 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 0.012 4.0 -- 10 25 100 -100 160 55 65 35 125 75 50 -- -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 35A A VDS = VGS, ID = 1.0mA VDS >= 15V, IDS = 35A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 50V VDD = 30V, ID = 35A VGS =12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 6300 2300 70 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 35* 140 1.2 200 818 Test Conditions A V ns nC Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.21 -- 0.6 -- 48 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM57064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-254) Diode Forward Voltage A Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.0061 0.012 1.2 60 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.0071 0.013 1.2 V nA A V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 48V, VGS =0V VGS = 12V, ID = 35A VGS = 12V, ID = 35A VGS = 0V, IS = 35A 1. Part numbers IRHM57064, IRHM53064 and IRHM54064 2. Part number IRHM58064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br Xe Au LET (MeV/(mg/cm2)) 37.3 63 86.6 Energy (MeV) 285 300 2068 VDS (V) Range (m) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V 36.8 60 60 60 60 40 29 46 46 35 25 15 106 35 35 27 20 14 70 60 50 40 30 20 10 0 0 -5 -10 VGS -15 -20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHM57064 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 10 10 5.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 35A I D , Drain-to-Source Current (A) 100 TJ = 150 C 1.5 TJ = 25 C 10 1.0 0.5 1 5.0 V DS = 25V 15 20s PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHM57064 10000 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A 16 VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Ciss 6000 Coss 4000 12 8 2000 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 C 10 ID, Drain-to-Source Current (A) 100 100s 1ms 10 10ms Tc = 25C Tj = 150C Single Pulse 1 10 100 1000 1 TJ = 25 C 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHM57064 Pre-Irradiation 120 LIMITED BY PACKAGE 100 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 80 -VDD VGS 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM57064 EAS , Single Pulse Avalanche Energy (mJ) 3000 15V 2400 ID 15.7A 22A BOTTOM 35A TOP VDS L DRIVER 1800 RG D.U.T. IAS tp + - VDD VGS 20V A 1200 0.01 Fig 12a. Unclamped Inductive Test Circuit 600 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHM57064 Pre-Irradiation A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 1.8mH Peak IL = 35A, VGS = 12V A ISD 35A, di/dt 265A/s, VDD 60V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-254AA 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C 14.48 [.570] 12.95 [.510] 0.84 [.033] MAX. 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] NOT ES : 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2004 8 www.irf.com |
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